Field emission electron sources in vacuum electronics are largely considered to achieve
faster response, higher efficiency and lower energy consumption in comparison with …

The high‐bias electrical characteristics of back‐gated field‐effect transistors with chemical
vapor deposition synthesized bilayer MoS2 channel and Ti Schottky contacts are discussed …

We report the first observation of a gate-controlled field emission current from a tungsten
diselenide (WSe2) monolayer, synthesized by chemical-vapour deposition on a SiO2/Si …

Few‐layer palladium diselenide (PdSe2) field effect transistors are studied under external
stimuli such as electrical and optical fields, electron irradiation, and gas pressure. The …

We study the effect of electric stress, gas pressure and gas type on the hysteresis in the
transfer characteristics of monolayer molybdenum disulfide (MoS 2) field effect transistors …

The metal-graphene contact resistance is one of the major limiting factors toward the
technological exploitation of graphene in electronic devices and sensors. High contact …

Background/aims The aim of this study was to evaluate the long-term corneal toxicity of
topical chemotherapy with 1% 5-fluorouracil (5-FU) as a sole or adjuvant treatment of ocular …

This study deals with the electrical transport in back‐gate field‐effect transistors with ultrathin
palladium diselenide (PdSe2) channels. The devices are normally‐on and exhibit dominant …

We report the electrical characterization and field emission properties of MoS 2 bilayers
deposited on a SiO 2/Si substrate. Current–voltage characteristics are measured in the back …

Metal contacts play a fundamental role in nanoscale devices. In this work, Schottky metal
contacts in monolayer molybdenum disulfide (MoS2) field-effect transistors are investigated …